100V N-Channel Enhancement Mode MOSFET.
DMT10H015LSS
DMT10H015LSS.pdf
DMT10H015LSS.pdf
No.13536
FEATURES
? 100% Unclamped Inductive Switch (UIS) Test in Production
? High Conversion Efficiency
? Low RDS(ON) – Minimizes On-State Losses
? Low Input Capacitance
? Fast Switching Speed
DESCRIPTION
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.
? Backlighting
? Power Management Functions
? DC-DC Converters
Mechanical Data:
? Case: SO-8
? Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
? Moisture Sensitivity: Level 1 per J-STD-020
? Terminal Connections Indicator: See Diagram
? Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
? Weight: 0.074 grams (Approximate)
APPLICATION CIRCUIT
PIN CONFIGUTION
